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Central Government/Public Sector

CTN :45263257

23 Jun, 2026 NA

Delhi - Delhi

Tender For supply of uhv deposition chamber - uhv chamber specification (vacuum better than 2 10-9 mbar uhv) chamber overview spherical (diameter 14 ) or equivalent square shaped uhv chamber with support frame equipped with three (3) x 2-inch magnetron sputtering sources. all cf flanges and uhv viewports/ss blanks, three (3) x 2-inch magnetron sputtering sources. each sputtering source has an individual gas inlet line for process gases. all cf flanges., substrate holder : diameter: 2 inches; heating molybdenum heater capable of heating substrate (a) from room temperature (rt) to 800 c during rotation and (b) from room temperature to 1000 c without rotation. rotation: substrate holder can rotate continuously, driven by a stepper motor. variable speed from 0 to 10 rpmmovement: up / down vertical movement of total 25mm to adjust substrate position during deposition sputtering geometry: one sputtering source mounted parallel to the substrate surface, tilt adjustable. two sputtering sources mounted confocally at an angle relative to the substrate. base pressure: lower than 2 10 mbar (ultra-high vacuum)., vacuum pumping system: turbo molecular pump: pfeiffer hipace300 / edwards next 300 / leybold turbovac 350i with cf100 flange or equivalent with integrated controller, ion pump with controller: included to maintain uhv vacuum levels and provide clean pumping., backing pump: pfeiffer hiscroll 12 / edwards nxds 15i / leybold scroll vac 15 plus or equivalent dry scroll pump used to back tmp, gate valves : one cf100 and one cf150 manual gate valves for isolating the chamber from the pumping systems as well as throttling, vacuum gauges and measurement: one cold cathode gauge with readout capable of measuring vacuum pressures down to1 10-10 mbar for precise uhv monitoring., one capacitance manometer gauge with measurement range from 1 10-1 to 1 10 mbar for accurate pressure reading during deposition phase, gas delivery system: two independent mass flow controllers (mfcs):a. one mfc (0-100 sccm) for argon gas feeding to all three sputtering sources via high vacuum valves.b. one mfc (0-100 sccm) for nitrogen gas feeding directly into the chamber with its own high vacuum valve.gas lines for ar and n2 are physically separated to avoid cross-contamination., chamber access and viewports: 1. two view ports installed on the chamber, each equipped with manual shutters. 2. access ports for gauges, pump, gas inlet and few spares for future upgradation., baking capability: entire chamber designed to bake-out at 150 c to reduce contamination and out gassing during operation, cooling capability : water manifold with flow switch / flow meters, near uhv chamber specification: chamber overview: spherical (diameter 14 ) or equivalent square shaped uhv chamber with stand., three 2-inch magnetron sputtering sources, each with individual gas inlet. all cf flanges and uhv viewports/ss blanks., substrate holder: a. diameter: 2inches; heating : molybdenum heater capable of heating substrate (a) from room temperature (rt) to 800 c during rotation and (b) from room temperature (rt) to 1000 c without rotation b. rotation : substrate holder driven by stepper motor. variable speed from 0 to10 rpmmovement: up / down vertical movement of total 25mm to adjust substrate position during deposition sputtering geometry: one sputtering source mounted parallel to substrate surface (tilt able preferred). two sputtering sources mounted confocally at an angle. base pressure : lower than 5 10 mbar (near uhv)., vacuum pumping system: turbo molecular pump : pfeiffer hipace 700 / edwards next 730 / leybold turbo vac 900 ix or equivalent with cf100 flange and integrated controller, suitable for near uhv vacuum., backing pump: pfeiffer hi scroll 12/edwards nxds15i / leybold scroll vac 15 plus or equivalent dry scroll pump used to back tmp, gate valves: one cf150 manual gate valve to isolate / throttle chamber from pumping system, vacuum gauges and measurement: cold cathode readout capable of dis